Intern - NAND Memory Cell

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Project Title: Electrical Characterization and Modeling of 3D NAND Memory Cells
Project Description
As NAND technology continues to scale in complexity, rapid learning from electrical characterization data is critical to device optimization and reliability improvement. This project leverages advanced data analytics to improve the efficiency and effectiveness of traditional characterization workflows.
In this project, the intern will:

• Perform electrical evaluation of 3D NAND memory cells, including program, read, and erase behavior.
• Conduct reliability characterization such as endurance cycling and data retention analysis.
• Apply statistical and exploratory data analysis to large-scale measurement datasets to identify trends, correlations, and performance drivers.
• Develop data-driven and physics-informed NAND device models, working closely with device engineers and mentors to translate data insights into physical understanding.
• Utilize automation, scripting, and visualization tools to improve analysis efficiency and shorten learning cycles.

Training on NAND device fundamentals, characterization platforms, and data / AI analysis tools will be provided. The intern will have opportunities to collaborate with cross-functional engineers and contribute to real device learning in advanced NAND technology nodes.
Scope

• Electrical characterization of 3D NAND cell performance and reliability metrics
• Statistical analysis and visualization of large electrical measurement datasets
• Exploration of AI / data analytics techniques to enhance device learning
• Development and refinement of data-driven and physics-based device models
• Automation of analysis workflows using scripting and visualization tools

Deliverables

• Characterization reports on 3D NAND cell performance and reliability behavior
• Data analytics insights identifying key performance and variability drivers
• Data-driven / physics-informed NAND device models
• Improved analysis workflows through automation and visualization

Impact of the Project

• Accelerated device learning and modeling for advanced 3D NAND technologies
• Improved understanding of NAND cell performance, reliability, and variability
• Enhanced efficiency in characterization and data analysis workflows

Skillset requirements:

• The knowledge of and experience of semiconductor devices characterization or/and processes development projects
• The knowledge of and experience with nonvolatile memories is preferred.
• Familiarity with basic data analysis or scripting tools (e.g., Python, JSL, MATLAB) is a plus
• Solid communication and reporting abilities
• Candidate must be pursuing MS or PhD in Electrical Engineering, Computer Science, Data Science, Physics, or a related field

About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all . With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities - from the data center to the intelligent edge and across the client and mobile user experience.
To learn more, please visit micron.com/careers
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
To request assistance with the application process and/or for reasonable accommodations, please contact [email protected]
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